Abstract
New data on the liquidus of the pseudobinary system InP/Sn are reported and the growth of graded quaternary epilayers from solutions in the tin-rich corner of the quaternary system Cd, Sn, In and P on p-type InP substrates is described. Also, we present preliminary results on the preparation of InP substrates crystals via zone melting and LEC pulling techniques. The properties of such crystals are characterized and compared to previously reported results for InP crystals grown by the gradient freeze technique.
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