Abstract
The increase in dislocation density at the surface of Zn-doped and Cd-doped p-type InP wafers as a result of heat-treatment and closed-ampoule sulfur diffusion was studied. This research was prompted by the observation of consistently lower efficiencies for solar cells made on Zn-doped as compared to Cd-doped InP substrates of nearly identical dopings and etch pit densities, under identical diffusion conditions. For an 11.83% (AM0, 25 degrees C) solar cell made from diffused Zn-doped substrate, the surface dislocation density was about 2*10/sup 7/ cm/sup -2/, whereas for 14.35% (AM0, 25 degrees C) solar cells made from diffused Cd-doped substrate, the surface dislocation density was about 8*10/sup 5/ cm/sup -2/.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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