Abstract
We demonstrate that phase masks can be generated by using interferometric lithography along with the Taguchi method as an optimization tool for processing phase masks. The optimized fabrication process, allows phase masks of sub-micron period, centimeter long, with the zero-order intensity suppressed down to 8%. For the demonstration of its practicality, one optimized phase mask with 1.08 μm period and 5% zero-order diffraction efficiency is shown capable of fabricating fiber Bragg gratings with 7 dB transmission loss at 1.563 μm wavelength. Furthermore, another 0.44 μm period phase mask is used to produce a photoresist pattern with halved period.
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