Abstract
X-ray absorption fine structure spectroscopy has been used to study the chemical and structural properties of self-forming diffusion barrier layers from Cu-8 at. % Mn alloy films on porous low-k and thermally grown SiO2 dielectrics. For the porous low-k/Cu(Mn) system, we provide evidence that the interface is composed of MnSiO3 and MnO with near complete Mn segregation from the alloy film; however, we find that the self-forming process does not go to full completion on thermally grown SiO2 substrates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
