Abstract
We investigate the effects of room-temperature irradiation of Au and Ge nanoislands grownon Si. Our studies show the formation of Au–Ge alloy phase within the islands and wettingof the substrate. High-resolution transmission electron microscopy along with synchrotronradiation-based x-ray reflectivity and grazing incidence x-ray diffraction measurements wereperformed to characterize the irradiation-induced changes brought into the sequentiallydeposited Au and Ge island thin films. The results are attributed to the recoil implantationand the transient melting of the nanoislands followed by the formation of crystalline alloyphase.
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