Phase diagram of AlN:(Ga, As)

Abstract

Self-assembling of 1As4Ga tetrahedral clusters in zinc blende AlN doped with Ga and As in the ultradilute As impurity limit is described by a phase diagram. The occurrence of these clusters is an initial stage of self-assembling. The final stage of self-assembling when all As impurities are in 1As4Ga clusters is reached at a finite temperature. Both stages are results of the second-order transitions. The conditions of these phase transitions are represented. It is shown that the phase diagram of wurtzite AlN:(Ga, As) should be quantitatively similar to the considered zinc blende one.