Phase change random access memory featuring silicide metal contact and high-κ interlayer for operation power reduction

Abstract

A phase change memory device integrated with a nickel monosilicide (NiSi) bottom electrode and a dielectric (Ta2O5) interlayer was investigated. The presence of a low thermal conductivity thin film between the bottom electrode and phase change layer promotes heating efficiency in the device. Reset voltages down to 2.2 and 1.86 V could be achieved for memory device without and with the Ta2O5 interlayer, respectively. In addition, low reset current of 0.66 mA and SET current of 0.2 mA were obtained for devices with Ta2O5 interlayer having a contact dimension of ∼1 μm. Endurance of the devices was also studied.