Abstract
Abstract Organic n-type semiconductors represent a promising alternative to metal oxide electron transport layer (ETL) materials for perovskite solar cells. In this work, we applied perylenetetrecarboxylic dianhydride (PTCDA) as ETL for planar perovskite solar cells assembled in n-i-p cell architecture ITO/PTCDA/MAPbI3/PTA/MoO3/Ag. Using an optimal thickness of PTCDA layer (3 nm), the devices delivered a promising power conversion efficiency of 14.3 % efficiency in devices. Higher efficiency of 15.2 % was obtained using a binary SnO2/PTCDA ETL layer, while the reference cells assembled with individual SnO2 ETL showed inferior performance. Our findings suggest that PTCDA can be considered as an alternative low-cost electron transport layer suitable for low-temperature and scalable fabrication of perovskite solar cells.
Published Version
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