Perspectives on MXene-PZT based ferroelectric memristor in computation in memory applications

Abstract

Lead zirconate titanate (PZT) is the promising candidate in advanced ferroelectric memory application due to its excellent piezoelectricity, ferroelectricity, pyroelectricity, non-linear dielectric behavior, multiferroic properties, high ferroelectric Curie temperature, and extremely strong stability. It has gained attention in the field beyond von-Neumann computing, which inspires the development of computation in memory applications. Various structures of the ferroelectric memristive device, including ferroelectric field effect transistor, tunnel junctions, nonvolatile memory, and capacitor, based on PZT have been proposed for the realization of computation in memory application. On the other hand, unique designs realize the performance enhancement of PZT ferroelectric memristive devices, i.e., the insertion of 2D material MXene. This perspective further points out some of the challenges that MXene-PZT based ferroelectric memristive devices encounter in reality and finally give our viewpoint on possible developments toward computation in memory in a neuromorphic platform.