Abstract
The persistent photoluminescence quenching effect is shown to occur on the broad 0.68-eV emission commonly present in undoped semi-insulating GaAs bulk materials. The dependence of this persistent emission on below band-gap energy excitation has been measured. The data indicate involvement of the main deep donor EL2 in the radiative mechanism of the 0.68-eV emission. The persistent photoluminescence quenching effect can be explained by the presence of both normal and metastable states of EL2.
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