Abstract
Abstract A strong persistent photocurrent (PPC) has been observed in some undoped semi-insulating Czochralski grown GaAs samples after illumination near 10 K with 1.1 eV light. The temperature dependence of the PPC at the lowest temperatures indicates thermal activation from shallow acceptors. Analysis of the PPC above 40 K indicates that annealing of the effect commences at this temperature. Infrared absorption studies show that EL2, which is quenched during activation of the PPC does not recover from its metastable state until 120 K or higher. We suggest that the PPC is produced by an interaction between EL2 in its metastable state and some other unidentified defect.
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