Abstract
Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) with perpendicular magnetic anisotropy (PMA) materials have received greater interest because of their advantages such as low magnetization switching current and fast switching time. Recent studies reported spin-orbit torque in NM/FM/MgO structure with PMA using various non-magnetic materials (Ta, W, Pt, etc.) and ferromagnetic materials (CoFeB, Co, etc.) [1]–[3].
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