Abstract
The dependence of perpendicular magnetic anisotropy (PMA) on the MgO thickness in Cr/CoFeB/MgO/Ta films has been experimentally investigated. A clear PMA is observed in the as-deposited samples with 1.8 nm MgO while no as-deposited PMA is shown in those with 4.0 nm MgO. This may be attributed to the moderate oxidation degree of CoFeB and larger interfacial anisotropy energy density K i to overcome the volume magnetic anisotropy and demagnetization field. On the contrary, samples with 4.0 nm MgO demonstrate PMA only after annealing, which might be due to the oxygen and boron diffusion during the annealing process. These results would provide a method to optimize the design of CoFeB/MgO structures on 3d metals for future applications in perpendicular magnetic devices.
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