Abstract
Polycrystalline thin Ni films deposited onto GaAs (001) show a transition of the magnetic anisotropy depending on its thickness. The anisotropy is perpendicular to the film plane for the thicknesses of the film equal to or less than 12 nm. This becomes in-plane in the films having thicknesses equal to or higher than 15 nm. The films are deposited onto the n-type GaAs (001) substrate by the electron beam evaporation in ultra high vacuum (UHV) in the standard molecular beam epitaxy (MBE) system. The experimental results are reviewed by introducing a uniaxial anisotropy, which is calculated from the easy-axis and hard-axis magnetization obtained by the superconducting interference device (SQUID) at various temperatures.
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