Abstract
AbstractMetal halide perovskites (MHPs) exhibit electronic and ionic characteristics suitable for memristors. However, polycrystalline thin film perovskite memristors often suffer from reliability issues due to grain boundaries, while bulk single‐crystal perovskite memristors struggle to achieve high LRS/HRS ratios. In this study, a single crystal memristive device utilizing a wide bandgap perovskite is introduced, MAPbBr3, in a high surface/thickness configuration. This thin single crystal overcomes these challenges, exhibiting a remarkable LRS/HRS ratio of up to 50 and endurance of 103 cycles, representing one of the highest reported values to date. This exceptional stability enables to analyze the electroforming process and LRS through impedance spectroscopy, providing insights into the underlying operational mechanism. As far as it is known, this is the first reported thin single‐crystal MHP memristor device and the first time that the electroforming process is recorded through impedance spectroscopy. This device's outstanding stability and performance position it as a promising candidate for high‐density data storage and neuromorphic applications.
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