Perovskite/InGaZnO-Based Reconfigurable Optoelectronic Device

Abstract

Herein, we demonstrate a drain voltage modulated reconfigurable optoelectronic device. It can switch work modes in unipolar response and bipolar response for photodetection mode and neuromorphic photo preprocessing, respectively. The device is fabricated based on perovskite-decorated photogate structure with an indium gallium zinc oxide (IGZO) channel, in which the channel photo-generated carrier concentration can be tuned by applied drain voltage. Under low drain voltage, the photodetection mode is achieved, exhibiting a high responsivity up to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4\times 10$ </tex-math></inline-formula> 2 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{A}\cdot \text{W}$ </tex-math></inline-formula> −1. While under high drain voltage, a bipolar response behavior is achieved, in which the low-intensity light induces a negative photo response (NPR) and the high-intensity light leads to a positive photo response (PPR). Furthermore, after contrast-enhanced preprocessing of bipolar devices, the recognition accuracy is enhanced from 89.4% to 92.8% and the efficiency is also improved. This work may contribute to the development of reconfigurable optoelectronic devices and neuromorphic photo preprocessing.