Abstract
The research paper presented here brings the peroration of research completed on a perovskite-CIGS-based tandem device using SCAPS as a simulating software. The wide bandgap Perovskite, i.e., Cs2AgBi0.75Sb0.25Br6 and narrow bandgap CIGS, i.e., CuIn0.75Ga0.25Se2 as an upper and lower cell of multijunction structure consecutively. The specialization of this work also includes the use of lead-free material Perovskite which is very pestilent in nature. The viability of the proposed structure has been carried forward in two phases, initially, the upper cell of perovskite material and CIGS based lower cell is simulated in stand-alone configuration to have and power conversion efficiency of 15.37% and 13.6% percent. Then both the device was appraised for tandem configuration, at the varying thickness of absorbing layer, the current matching condition has been achieved, the optimized thickness for perovskite kind-based cell is 350 nm where for CIGS based cell it is 510 nm. After embedding the upper and lower cell with filter structure conversion efficiency for the upper and lower cell was 15.37% and 12.23% respectively. multi junction structure as a whole has a conversion efficiency of 27.5% virtue of an augmentation of open-circuit voltage with Voc of 1.7213 V.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call