Periodic stacking of two dimensional Bismuth bi-layers in Bismuth stearate thin films

Abstract

Investigations of single and bilayers of bismuth are one of the most thrusting areas of research in contemporary condensed matter physics and material sciences. This is because such ultrathin layers of bismuth host interesting exotic electronic properties, which are important from both fundamental science and future application perspectives. In the past, many inorganic processes for the synthesis of single and bi-layers of bismuth were reported using physical and chemical vapor deposition techniques. The ultrathin films deposited are found to interact electronically with the substrates due to their proximity to the substrate surface. We introduce a new and easy organic channel for the synthesis of the bismuth multi-bilayers in ambient conditions. Bismuth stearate multi-bilayer thin films are deposited on the hydrophobic silicon and hydrophilic glass substrates using the Langmuir-Blodgett technique. Optical absorption spectroscopy measurements in the infrared region provided information on various bond structures present in those bismuth stearate thin films. Specular x-ray reflectivity (XRR) experiments and their analysis of such thin films unambiguously show the highly periodic stacking of bismuth bilayers along the surface-normal directions within the multilayer film structure. Model-based microstructural analysis of the XRR data further shows that each bilayer of bismuth is well separated (3.5 nm) from other bismuth bilayers by hydrocarbon chains. At these separations, the electronic states of the bismuth bilayers are expected to be non-interacting with each other. The morphology of the surface obtained from field emission scanning electron microscopy supports the XRR analysis. A bandgap of 3.2 eV was obtained for such bismuth stearate thin films from the optical spectroscopy measurements in the UV-visible range. The large separations between the bismuth-bilayers and between the substrate and the bismuth bilayers are expected to minimize the electronic interactions between them.