Abstract
Slow-wave structures on GaAs semi-insulating substrate, obtained by periodically loading a coplanar line with high-Q overlap capacitors, are described. They operate up to X-band, reducing significantly the signal phase velocity by a factor nearly independent of the frequency. Owing to their low transmission losses, they are particularly suitable for monolithic GaAs f.e.t. circuits.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
