Periodic Si-hole-masks in the μm and sub-μm range for electron-multibeamwriting

Abstract

For the generation of multiple electron beams for a writing system periodic hole marks are necessary. Using the mask technology and anisotropic etching we realized such structures on (100) silicon wafers with dimensions below 1 μm. We introduced a novel technique, which allows us to generate membranes of arbitrary thickness. These membranes are tension-free, because we need no boron diffusion for the generation of the membrane.