Periodic conductance fluctuations in quasi-one-dimensional metal-oxide-semiconductor field-effect transistors with shallow-trench isolations.

Abstract

Results of conductance measurements in 0.2-\ensuremath{\mu}m-wide and 0.15-\ensuremath{\mu}m-long silicon metal-oxide-semiconductor field-effect transitions with shallow-trench isolations are presented. At T=1.2 K, two kinds of periodic conductance fluctuations are observed; fine structure near threshold and plateaus in the higher conductance regime (\ensuremath{\sim}0.1 mS). The latter are accentuated by applying moderate magnetic fields of 1--2 T, remaining unchanged in their positions. We attribute these features to a quasi-one-dimensional transport mechanism caused by strain-induced narrow potential wells along the trench isolations.