PERHITUNGAN POLARISASI SPONTAN DAN MOMEN QUADRUPOL POTENSIAL LISTRIK BAHAN PIZT (PbInxZryTi1-x-yO3-x/2)

Abstract

The Calculation Spontaneous Polarization and Quadrupole Moment of Electric Potential PIZT (PbInxZryTi1-x-yO3-x/2). PZT (PbZr1-xTixO3) is a perovskite crystal that can be used for IR sensor. Small amount of dopant can drastically change the specific characteristic of ferroelectric ceramic such as spontaneous polarization, dielectric constant, electromechanical and also electro-optic properties. The addition of In3+ ion (called as hard doping) has been applied in this research. Thin film of PIZT (PbInxZryTi1-x-yO3-x/2) has been deposited on Si(100) substrate with Chemical Solution Deposition (CSD) method. The concentration of solution is 0,5 M and the angular speed applied of spin coating is 3000 rpm. The PIZT sample has been analyzed with x-ray diffraction method. Rietveld analyses using GSAS-EXPGUI software resulted lattice parameter of crystal and phase compositions of PIZT samples. The values of all sample PIZT spontaneous polarization (Ps) have been calculated lower than PZT. The optimally Ps was reached at 0,5% to 1% In2O3 doping. Quadrupole moment of electric potential Normal 0 false false false EN-US X-NONE X-NONE MicrosoftInternetExplorer4 ( θ Q ( r )) at point P (0,0,2 a ) reached optimum at 6% In2O3 doping and they also showed that PIZT thin film have θ Q ( r ) higher value than their bulk form for In2O3 doping >1%. Keywords: PZT, PIZT, XRD, Rietveld analyses, spontaneous polarization, quadrupole moment of electric potential