Abstract
Performance of novel Pd/Sn and Pd/Sn/Au Ohmic metallizations to n-GaAs have been investigated. Metallizations were deposited using a resistance heating evaporator and annealings were performed utilizing a conventional graphite strip annealer (cGSA). Metallization samples were characterized using scanning tunneling microscopy (STM), secondary ion mass spectrometry (SIMS) and current–voltage ( I– V) measurements. Contact resistivities, ρ c, of the metallizations were measured utilizing conventional transmission line model (cTLM) method. Novel Pd/Sn and Pd/Sn/Au Ohmic contacts exhibit better thermal stability compared to non-alloyed Pd/Ge metallization. In order to investigate the effectiveness of novel Pd/Sn and Pd/Sn/Au Ohmic metallizations in device applications, gallium arsenide metal-semiconductor field-effect transistors (GaAs MESFETs) have been fabricated. MESFETs fabricated with Pd/Sn/Au Ohmic contacts show a extrinsic transconductance, g me, of more than 133 mS/mm for a gate length, L G, of 2 μm.
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