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Abstract
Al-doped ZnO(AZO) thin films were prepared by pulsed laser deposition under different oxygen pressures.AZO films with highly transparent conductive properties were obtained at 0.1 Pa.AZO films were used on GaN-based light-emitting diodes(LEDs) as transparent contact layers.At a forward current of 20 mA,the 520 nm electroluminescence peak was evidently observed,with a high working voltage of 10 V.The brightness of the chip was enhanced as the forward current increased.Secondary ion mass spectra revealed that the high working voltage of the LED might be triggered by the change of material conductivity and the passivation layer formed at the AZO/GaN interface.
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