Abstract
Abstract A PbTiO3 gated metal-SiO2-n-p + switch diode has been developed, in which the switching voltage changes in proportion to the infrared light power. The infrared-sensitive layer is RF sputtered PbTiO3 ferroelectric thin film. At room temperature, typically, the switching voltage changes from the original value of 4.2 V to 3.625 V under only 50 μw infrared light power. In addition, the current-voltage curves, the effect of infrared light power on switching voltage, and the effect of PbTiO3 thickness on switching voltage as well as operational mechanisms are reported in detail.
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