Performance-Based Comparative Study on Single- and Dual-Gate OTFT: Modeling and Simulation Using TCAD

Abstract

The study on organic electronics attracted the researcher and the industrialist for its novel features. In this paper, a comparative analysis has been performed for the single- and the dual-gatebased organic thin-film transistors (OTFTs) to examine the performance parameters such as on/off current ratio, subthreshold swing, mobility, and threshold voltage, etc. The analytical modeling and simulation have been carried out with the help of the ATLAS 2D numerical device simulator, and it is observed that the variation in the structural dimension of the OTFT is widely affecting these performance parameters. Furthermore, it is also observed that the reduction in the channel length by 80% (from 50 µm to 10 µm having a step size = 10) leads to an increase in the drive current by 81% in the dual-gatebased OTFT and 80% in the case of single-gatebased OTFTs, respectively, and the variation in thickness of active layer from 60 nm to 20 nm (under the same step size) leads to an enhancement in the on/off current ratio by 99% with the subsequent reduction in leakage current. Decreasing the dielectric thickness from 10 nm to 2 nm (with a step size of 2) leads to an enhancement in these performance parameters. Finally, it is witnessed that the dual-gate OTFT is showing excellent performance over single-gate OTFT, which sanctions to achieve high-speed applications.