Abstract
AbstractIntermodulation distortion tests using the two‐tone technique with an extensive bias range were used to demonstrate the nonlinearity in terms of frequency for active devices like nano pHEMT based on gallium arsenide semiconductor material. It is demonstrated that the intermodulation distortion components are directly connected to the RF transconductance derivatives calculated using the two‐tone test. Furthermore, it was discovered that the third‐order intermodulation distortion power is lowest when the second derivative of the transconductance Gm3 is zero. To emphasize the influence of RF transconductance, a two‐tone approach has been presented as an empirical, analytical explanation for this device's nonlinearity. The modeled data is demonstrated to agree with the results of the measurements, making it a helpful tool for analyzing these devices.
Published Version
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