Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD

Marwa S Salem,Adwan Alanazi,Omar M Saif,Rabie A Ramadan,Abdullah J Alzahrani,Mohamed Abouelatta,M K Elsaid,Ahmed Shaker,Elias Stathatos

doi:10.1155/2021/8842975

Abstract

In this work, an optimization of the InGaP/GaAs dual-junction (DJ) solar cell performance is presented. Firstly, a design for the DJ solar cell based on the GaAs tunnel diode is provided. Secondly, the used device simulator is calibrated with recent experimental results of an InGaP/GaAs DJ solar cell. After that, the optimization of the DJ solar cell performance is carried out for two different materials of the top window layer, AlGaAs and AlGaInP. For AlGaAs, the optimization is carried out for the following: aluminum (Al) mole fraction, top window thickness, top base thickness, and bottom BSF doping and thickness. The electrical performance parameters of the optimized cell are extracted: J SC = 18.23 mA / c m 2 , V OC = 2.33 V , FF = 86.42 % , and the conversion efficiency ( η c ) equals 36.71%. By using AlGaInP as a top cell window, the electrical performance parameters for the optimized cell are J SC = 19.84 mA / c m 2 , V OC = 2.32 V , FF = 83.9 % , and η c = 38.53 % . So, AlGaInP is found to be the optimum material for the InGaP/GaAs DJ cell top window layer as it gives 4% higher conversion efficiency under 1 sun of the standard AM1.5G solar spectrum at 300 K in comparison with recent literature results. All optimization steps and simulation results are carried out using the SLVACO TCAD tool.

Highlights

There has been a trend for shifting energy production by renewable energy resources especially solar energy which is considered the most favorable resource as it is safe and clean [1, 2]
The device structure is optimized by using AlGaAs and AlGaInP in the window layer of the top cell
The efficiency has been optimized by varying the thickness of the top window layer

Summary

Introduction

There has been a trend for shifting energy production by renewable energy resources especially solar energy which is considered the most favorable resource as it is safe and clean [1, 2]. Among the multijunction solar cells, the III-V semiconductor compound-based solar cells are the commercially available cells with the highest reported efficiency [12, 13] reaching 46% under high solar concentration [2, 3]. In this regard, the InGaP alloy is a vital material for highefficiency solar cells as it absorbs the visible part of the solar spectrum [14,15,16]. InGaP/GaAs DJ solar cells have been widely studied due to their superb bandgap arrangement in lattice-matched systems [18]

Methods

Findings

Conclusion