Abstract
The titanium nitride–aluminum oxide–hafnium oxide–silicon oxide–silicon device using aluminum oxide as charge-blocking layer (hereafter TAHOS) could be a candidate for nonvolatile total ionization dose (TID) radiation sensor. In this paper, gamma radiation induces a significant decrease in the threshold voltage VT of TAHOS and the radiation-induced VT decrease on TAHOS is nearly 1.3 times of that on a standard titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon device (hereafter TOHOS) device after 5 Mrad TID gamma irradiation. The change in VT of TAHOS after gamma irradiation also has a strong correlation to TID up to 5 Mrad gamma irradiation. Moreover, the VT 10yrs retention characteristic of TAHOS device can be markedly improved and is nearly 13% better than that of a standard TOHOS device after 5 Mrad gamma irradiation. Therefore, the TAHOS device in this study has demonstrated the possibility using TAHOS for high TID response and good TID data retention for non-volatile TID radiation sensing.
Highlights
The measurement of total ionizing dose (TID) is a major concern in various ionizing radiation applications
TOHOS) device has been shown to be suitable for total ionization dose (TID) nonvolatile radiation sensor applications [1
This indicates that gamma irradiation induces a large negative VT shift for TAHOS
Summary
The measurement of total ionizing dose (TID) is a major concern in various ionizing radiation applications. TOHOS) device has been shown to be suitable for TID nonvolatile radiation sensor applications [1–. The ionizing radiation induces threshold voltage VT shift of the TOHOS device, and the VT shift depends on the TID. Silicon device using a high k aluminum oxide (Al2O3) as charge-blocking layer (hereafter TAHOS). The radiation–induced charging effect and charge-retention reliability of the TAHOS device was significantly better than that of a standard TOHOS device. The comparison of radiation-induced charging effect and charge-retention reliability performance between the TAHOS and TOHOS devices after gamma irradiation were the main subjects of this study.
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