Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS.

Wen-Ching Hsieh,Fuh-Cheng Jong,Hao-Tien Lee,Shich-Chuan Wu

doi:10.3390/s16040450

Abstract

Fluorine-treated titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon devices (hereafter F-MOHOS) are candidates for total ionization dose (TID) radiation sensor applications. The main subject of the study reportedherein is the performance improvement in terms of TID radiation-induced charge generation effect and charge-retention reliability characterization for F-MOHOS devices. In the case of F-MOHOS TID radiation sensors, the gamma radiation induces a significant decrease of threshold voltage VT and the radiation-induced charge density is nearly six times larger than that of standard metal–oxide–nitride–oxide–silicon MONOS devices. The decrease of VT for F-MOHOS after gamma irradiation has a strong correlation to the TID up to 5 Mrad gamma irradiation as well. The improvement of charge retention loss for F-MOHOS devices is nearly 15% better than that of metal–oxide–hafnium oxide–oxide–silicon MOHOS devices. The F-MOHOS device described in this study demonstrates better feasibility for non-volatile TID radiation sensing in the future.

Highlights

The total ionizing dose (TID) radiation-induced charging effect is a major application concern for the operation of electronic devices in advanced X-ray lithography semiconductor manufacturing processes and outer space applications
Chargesgeneration generationand andtrapping trappingstates statesin in the FAB-MOHOS device after gamma irradiation
As shown by the experimental data, F treatment during HfO2 deposition is a very effective process for enhancing the radiation-induced charging effect of MOHOS devices. It can be explained process for enhancing the radiation-induced charging effect of MOHOS devices. It can be explained by the fact that the enhanced radiation-induced charging effect of F-MOHOS was induced by more radiation-induced positive charges in the F-treated HfO2 trapping layer

Summary

Introduction

The total ionizing dose (TID) radiation-induced charging effect is a major application concern for the operation of electronic devices in advanced X-ray lithography semiconductor manufacturing processes and outer space applications. Little was known about the radiation response of SONOS–like devices with high k charge-trapping structure [4,5]. The effects of radiation response on a few SOHOS-like devices have been reported [4,5], but the charge retention reliability of the SOHOS device as TID radiation sensor has not been well studied and it will be the main subject of this study. Sensors 2016, 16, 450 improve the radiation-induced charge density and charge retention reliability of SOHOS device for non-volatile TID radiation sensor applications, a titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon device with CF4 plasma treated hafnium oxide HfO2 (hereafter F-MOHOS) was fabricated. The NVS application increases the survival yield of radiation-induced electron-hole pairs from the initial recombination process and increases the radiation-induced charging yield of the MOS type devices [6]

Experimental Section

Mradnegative

Mrad gamma irradiation is in under4Figure

Conclusions