Performance of Supercritical Resist Drying in Improving Practical Resolution Limit

Abstract

We have studied the lithographic performance of resist pattern prepared by supercritical resist drying method. Patterns were exposed by proximity X-ray lithography and the supercritical resist drying was performed with CO2 by 10 MPa and 60°C. We found that 70-nm-L/S patternswere prepared with the exposure gap of 15 μm, though it had not been ever obtained withoutsupercritical drying. The CD control and line-edge-roughness for those patterns are also measured.