Abstract
The response of p-i-n diodes and of novel pixel counters, capable of signal storage, to high radiation doses was studied systematically by means of 10-MeV proton beams scattered from gold foils. The leakage current shows a more than proportional increase with increasing dose and an exponential dependence on temperature. The cooled (-50 degrees C) p-i-n diodes remain operational at the highest dose of 17.6 Mrad. As specific radiation effects of the DEPMOS counter, incorporating a MOS transistor structure on a fully depleted bulk of 280- mu m thickness, shifts of the transmission characteristics and a decrease of the acceptance period of the internal gate which allows for nondestructive readout have been observed. Annealing at room temperature was studied for both detector types. >
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