The study of 4H-SiC alpha particle detectors with different Schottky contact metallization

Abstract

We fabricated and characterized 4H-SiC Schottky diodes as a spectrometric detector of alpha particles. Two types of blocking contacts based on Ni/Au and Pt/Au were used. The total thickness of prepared blocking contacts was about 15 nm to minimize the influence on alpha particles energy resolution. Current-voltage characteristics of two types of detectors were measured at room temperature and compared. As a source of alpha particles we utilized triple radioisotope of 239Pu 241Am 244Cm. Detected alpha particles had energies from 5.1 MeV up to 5.8 MeV. The spectrometric performance of detectors with two types of blocking contacts were evaluated and compared.We fabricated and characterized 4H-SiC Schottky diodes as a spectrometric detector of alpha particles. Two types of blocking contacts based on Ni/Au and Pt/Au were used. The total thickness of prepared blocking contacts was about 15 nm to minimize the influence on alpha particles energy resolution. Current-voltage characteristics of two types of detectors were measured at room temperature and compared. As a source of alpha particles we utilized triple radioisotope of 239Pu 241Am 244Cm. Detected alpha particles had energies from 5.1 MeV up to 5.8 MeV. The spectrometric performance of detectors with two types of blocking contacts were evaluated and compared.