Abstract
Having ascertained the improvement of band gap and conductivity of the synthesized TiO2 after HF treatment under consideration, it occurred to us that the materials may perform as the better Schottky barrier diode. To verify our presumption, we studied the I-V characteristic of the device fabricated in a sandwich configuration of FTO/sample/Al. The comparative studies show better potentiality of the material in subject to study the qualitative and quantitative measures of the Schottky devices. The work is concluded by examined the various characteristic parameters related with performance of device that is fabricated with HF treated and untreated TiO2.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
