Abstract
In this letter, the electrostatic and the performance of cylindrical silicon nanowire (NW) MOSFETs with an omega-shaped gate and diameters down to 8 nm are investigated. The impact of silicon nitride (SiN) spacer thickness (7, 10, or 15 nm) on short-channel performance is examined. The tradeoff between superior electrostatic confinement and electrical performance, which will be an essential consideration for the design of future NW devices, is clearly observed. Finally, a comparison with trigate NWs shows an improved electrostatic control for a cylindrical-shaped gate, as theoretically expected.
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