Performance of low-light-level night vision device affected by backscattered electron from ion barrier film

Abstract

In order to suggest the performance of low-light-level night vision device affected by backscattered electron from ion barrier film(IBF), in this paper, based on the idea of Monte-Carlo, the track of electron impinging and rebounding on ion barrier film is simulated. The Lambert distribution and Beta distribution are used to calculate electron’s emission. The Mott cross section and the Bethe formula rewrited by Joy are used to describe and calculate the elastic and inelastic scattering electron traversing in the film. With the statistic of the total transmitted electron and the discussion on the effect of cathode voltage, proximity between ion barrier film and photocathode on performance of low-light-level night vision device, we get the point diffusion function of ion barrier film, and we conclude that in low light level backscattered electron hardly affect working of image intensifier and higher cathode voltage, closer proximity between cathode and ion film will reduce the impact of backscattered electron in high light level.