Abstract
It is known that due to several current injection mechanisms, tunnel FETs can attain a subthreshold swing less than 60 mV/dec at normal temperature, which makes it alternative for MOSFETs, particularly in low power applications. This work investigates the electrical and analog performance of dual metal double gate hetero dielectric source pocket TFETs in contrast to dual metal double gate high-k dielectric source pocket TFETs. Numerical calculations were carried out to find the characteristics of both the devices. It is observed that for hetero-dielectric structure, the OFF current decreases significantly while having the marginal effect on the ON state current in contrast to double gate high-k dielectric structure.
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