Abstract
In this ATLAS upgrade R&D project, we explore the concept of using a deep-submicron HV-CMOS process to produce a drop-in replacement for traditional radiation-hard silicon sensors. Such active sensors contain simple circuits, e.g. amplifiers and discriminators, but still require a traditional (pixel or strip) readout chip. This approach yields most advantages of MAPS (improved resolution, reduced cost and material budget, etc.), without the complication of full integration on a single chip. After outlining the basic design of the HV2FEI4 test ASIC, results after irradiation with X-rays to 862 Mrad and neutrons up to 1016(1 MeV neq)/cm2 will be presented. Finally, a brief outlook on further development plans is given.
Highlights
Operational parameters of the sensor will be further optimized and the sensor performance studied in greater detail
Due to the flexibility of the sensor it offers an alternative for the necessary replacement of the ATLAS silicon strip detector
Summary
Two small-size prototypes to test the concept in 180 nm technology are currently available: HV2FEI4v1 (first generation) and HV2FEI4v2 (second generation). The second generation comprises three pixel types, two of them with radiation hard electronic elements (e.g. circular transistors) partially implemented. It is 4.4 × 2.2 mm large with a pixel size of 125 × 33 μm. Two of them were irradiated to 1015 and two to 1016 1 MeV neq /cm (±10 %) For each of these fluxes one chip was assembled into a CCPD and successfully operated.
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