Abstract
AbstractThis paper describes design and performance of AlGaN/GaN heterojunction FETs for microwave power applications. A recessed‐gate FET with a field‐modulating plate (FP) was developed for high‐voltage power operation at L‐band and C‐band. The developed recessed FP‐FETs exhibited a 230‐W CW output power at 2 GHz and a 156‐W pulsed output power at 4 GHz. A T‐shaped 0.25‐μm‐gate FET was fabricated for high‐frequency power operation at Ka‐band. A 1.0‐mm‐wide FET exhibited a 5.8‐W CW output power at 30 GHz. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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