Abstract
Load-pull power and waveform measurements were performed on C-band InGaP/GaAs heterojunction bipolar transistors of various sizes. In general, pulsed output power was found to be 2-4dB higher than CW output power. Based on the measured dynamic load lines, the higher output power can be attributed to higher peak current and higher breakdown voltage under pulsed conditions. From the measured harmonic contents, pulsed operation was also found to be more linear than CW operation, probably due to the absence of thermally induced weak nonlinearity under pulsed conditions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
