Performance of a Petrov–Galerkin algebraic multilevel preconditioner for finite element modeling of the semiconductor device drift‐diffusion equations

Abstract

AbstractThis study compares the performance of a relatively new Petrov–Galerkin smoothed aggregation (PGSA) multilevel preconditioner with a nonsmoothed aggregation (NSA) multilevel preconditioner to accelerate the convergence of Krylov solvers on systems arising from a drift‐diffusion model for semiconductor devices. PGSA is designed for nonsymmetric linear systems, Ax=b, and has two main differences with smoothed aggregation. Damping parameters for smoothing interpolation basis functions are now calculated locally and restriction is no longer the transpose of interpolation but instead corresponds to applying the interpolation algorithm to AT and then transposing the result. The drift‐diffusion system consists of a Poisson equation for the electrostatic potential and two convection–diffusion‐reaction‐type equations for the electron and hole concentration. This system is discretized in space with a stabilized finite element method and the discrete solution is obtained by using a fully coupled preconditioned Newton–Krylov solver. The results demonstrate that the PGSA preconditioner scales significantly better than the NSA preconditioner, and can reduce the solution time by more than a factor of two for a problem with 110 million unknowns on 4000 processors. The solution of a 1B unknown problem on 24 000 processor cores of a Cray XT3/4 machine was obtained using the PGSA preconditioner. Copyright © 2010 John Wiley & Sons, Ltd.