Abstract
Performance of a new generation of micropixel avalanche photodiodes of MAPD-3NK type from Zecotek Photonics as a function of the bias voltage has been studied at the temperature range from –116 °C to 20 °C. The temperature coefficient of the breakdown voltage for this device is 58 ± 3mV/∘C. Photon detection efficiency of the MAPD-3NK has been compared with that of a similar device (serial number: S12572-010P) from Hamamatsu Photonics at the temperature of –27 °C. Both photodiodes have the same pixel density of 10,000 pixel/mm2. The photon detection efficiency of 5 ± 0.3% and 40 ± 2% was measured at the same overvoltage of 3 V for the S12572-010P and the MAPD-3NK, respectively.
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