Abstract
A multilayer graphene (MLG) film was grown on thermally oxidized silicon (SiO2/Si) substrate by atmospheric pressure chemical vapor deposition (APCVD). The formation of the MLG and the presence of the oxide on the graphene surface were confirmed by Raman spectroscopy and electron dispersive spectroscopy (EDS), respectively. An energy gap of 0.234 eV was determined by the optical transmission method. The surface morphology of the graphene film was studied by field emission scanning electron microscopy (FESEM) and by atomic force microscopy (AFM). A planar device with lateral Pd metal contacts was used for the hydrogen sensor studies. The sensor performance in the temperature range (110 °C–150 °C) revealed a relatively fast response (~12 s) and recovery (~24 s) for hydrogen sensing. The reproducibility, the selectivity, and the stability of the device were also studied. The sensor was found to be selective for hydrogen relative to methane in the temperature range studied. The gas sensing mechanism has been suggested on the basis of the interaction of palladium with hydrogen, the change in the interface barrier, and the adsorption–desorption processes related to the change in the hydrogen partial pressure and temperature. The AFM study indicates the reorientation of the graphene surface after the sensing operation, most probably due to hydrogen passivation.
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