Abstract
Atmospheric pressure chemical vapour deposition was employed to deposit graphene thin films on thermally oxidized p-silicon substrates. Raman spectroscopy and energy dispersive spectroscopy revealed the multilayer nature and the composition of the grown graphene films respectively. The defective nature and the defect density of the graphene films were determined from the Raman experiments. Field effect scanning electron microscopy, transmission electron microscopy and atomic force microscopy were used to study the surface morphology of the multilayer graphene films. The film topography was sensitive to temperature and time of growth. A suitable growth mechanism has been proposed to explain the topographical observations. The large surface area of the multilayer films was found to be suitable for hydrogen sensor applications and the sensing results were correlated with the morphology of the grown films.
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