Performance Limitations of Si Bulk CMOS and Alternatives for future ULSI

Abstract

A channel material with high mobility and therefore high injection velocity can increase on current and reduce delay. Currently, strained-Si is the dominant technology for high performance MOSFETs and increasing the strain provides a viable solution to scaling. However, looking into future scaling of nanoscale MOSFETs it becomes important to look at higher mobility materials, like Ge and III-V materials together with innovative device structures which may perform better than even very highly strained Si. For both Ge and III-V devices problems of leakage need to be solved. Novel heterostructures will be needed to exploit the promised advantages of Ge and III-V based devices.