High mobility Ge and III–V materials and novel device structures for high performance nanoscale MOSFETS

Abstract

In order to continue the scaling of silicon-based CMOS and maintain the historic progress in information processing and transmission, innovative device structures and new materials have to be created. A channel material with high mobility and therefore high injection velocity can increase on current and reduce delay. Currently, strained-Si is the dominant technology for high performance MOSFETs and increasing the strain provides a viable solution to scaling. However, looking into future scaling of nanoscale MOSFETs it becomes important to look at higher mobility materials, like Ge and III-V materials together with innovative device structures and strain, which may perform better than even very highly strained Si. For both Ge and III-V devices problems of leakage need to be solved. Novel heterostructure quantum-well (QW) FETs will be needed to exploit the promised advantages of Ge and III-V based devices.