Abstract
Abstract Two single crystal silicon solar cells SC1 and SC2 were fabricated by diffusion technology. A p-n junction was established by doping n-type silicon wafers with boron. The fabrication process was described in detail. The I–V characteristics of the solar cells SC1 and SC2 were plotted. Other parameters affecting the performance of the fabricated cells such as incomplete absorption of photons, series resistance, shunt resistance, fill-factor, metallization and heat treatment were carefully examined. Conversion efficiencies of 10.6±0.2% were obtained. These values correspond to effective conversion efficiencies of 12.5±0.2% based on active cell area. Recommendations to fabricate single crystal silicon solar cells with better performance were given.
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