Performance Improvements of Metal–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with ZrO2 Charge-Trapping Layer by Using Nitrogen Incorporation

Abstract

The properties of ZrO2 and ZrON as the charge-trapping layer (CTL) of metal–oxide–nitride–oxide–silicon memory are investigated. The microstructure and chemical bonding are examined by X-ray diffraction and X-ray photoelectron spectroscopy. It is found that nitrogen incorporation in ZrO2 can induce more charge-trapping sites, effectively suppress the formation of zirconium silicate (leading to better interface quality between the CTL and the SiO2 tunneling layer), and increase the dielectric constant of ZrO2, thus improving the memory performances (large memory window, high program/erase speed, good endurance characteristics, and small charge loss).