Performance improvements of AlGaN-based deep-ultraviolet light-emitting diodes with specifically designed irregular sawtooth hole and electron blocking layers

Abstract

A new structures for efficient AlGaN based deep-ultraviolet light-emitting diode (DUV -LED) with irregular sawtooth hole barrier layer (HBL) and electronic barrier layer (EBL) is proposed in this work. Optical output power and internal quantum efficiency(IQE), the energy band diagrams, radiative recombination rate are investigated by APSYS software. The results indicate that light output power of the DUV-LED with the new structure is enhanced by 131.8%, and internal quantum efficiency is increased by 125.0% at an injection current of 180 mA compared with the conventional AlGaN based DUV-LED structure. Further research shows that irregular sawtooth hole blocking layer(HBL) and electron blocking layer(EBL) can obviously improve the carrier radiation recombination rate, modulate carrier distribution, enhance electron injection efficiency, and confine hole leakage; thus the IQE and optical output power are enhanced.