Abstract
The AlGaN-based deep ultraviolet light-emitting diodes with a p-type Al0.92In0.08N/Al0.55Ga0.45N superlattice electron-blocking layer are studied numerically. The energy band diagrams, radiative recombination rate, electron leakage current, light output power and internal quantum efficiency are investigated. The simulation results show the structure has a low electron leakage current and high hole injection efficiency compared to the original deep ultraviolet light-emitting diodes, which is ascribed to the deep ultraviolet light-emitting diodes with a p-type Al0.92In0.08N/Al0.55Ga0.45N superlattice electron-blocking layer having a low polarization effect on the interface between the last quantum barrier and the electron-blocking layer. As a result, the radiative recombination rate and the light output power are significantly enhanced.
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